EBL1: E-Beam Lithography System

Model: Elionix ELS-7500 EX E-Beam Lithography System
Location: 1505 Fitzpatrick CIEMAS
Tool Group and Rate: Clean Room - $36.1/$72.2 per hour

Training Request Training for EBL1 Training Checklist for EBL1 Operating Procedures EBL1 Operating Procedure EBL Guidelines EBL CAD Procedure EBL Field Correction Procedure EBL Overlay Procedure EBL Resist Processes ZEP520A Technical Report Helpful Links Elionix Website Elionix Japanese Website

The ELS-7500EX is capable of producing ultra fine features down to a 10nm linewidth.  It offers a Zr/W thermal field emission electron gun with a maximum 50Kev accelerating voltage and minimum beam diameter of 2nm.   It has a Windows based CAD and GUI layout, with a conversion capability for previously generated CAD files.  The Laser interferometer stage and 18 bit DAC beam positioning system provide excellent stitching and writing capabilities.   The various stage options allow for patterning of substrate sizes ranging from small pieces (1cm) up to wafers that are 6" in diameter.

Applications	Electron Beam Lithography (EBL) SEM Imaging
Features	Sample holders for: Small pieces Wafers from 2"-6" Photomasks Circle pattern generator Spot lithography function Variable field size function CAD system with pattern data creation program and lithography control program Data conversion function (GDSII and DXF formats)
Specifications	Field sizes: 1200um, 600um, 300um, 150um, and 75um Minimum linewidth: 10nm (with 75um field at 50kV) Scan rate: 0.1usec/step - 3200usec/step Minimum beam diameter: 2nm Beam current: 1pA - 50nA (SMIF operating range: 18pa - 2nA) Stage movement range: x: 100mm y: 110mm z: 5mm Stage position resolution: x,y:  1nm z: 0.2um Field stitching accuracy: 75um field: <10nm 150um field: <20nm 300um field: <30nm Overlay accuracy: 30nm